NEET Physics Questions: Electronic devices

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C, Si and Ge have same no. of valence electrons. C is an insulator because energy required to take one electron out from




Ionization energy of isolated phosphorous atonis 10 eV. Ionization energy of same atom in Si is nearly________- eV (Relative Permitivity of silicon = 12)




By adding impurity in intrinsic semiconductor P type semiconductor is made. Charge of these P type semiconductor is




Strong overlaping of different atomic orbitals makes




We can not make p-n junction diode by making P type semi-condutor join with N - type semi-conductor, because




For p-n junction, which statement is incorrect




The intrinsic semi-conductor has :




The behaviour of Ge as semi-conductor is due to width of :




Which of the following is not the advantage of PN junction diode over tube valve ?




A current gain for a transistor working as CB amplifier is 0.90. If emitter current is 10 mA, then base current is




For a transistor $ { I_c \over I_E } =0.96 $, then CE current gain is :




At 0 K temp, a N - type semi-conductor




In Si-crystal, impurity donor atom have valency.




A N-P-N transistor conducts when collector is______ and emitter is_____ with respect to base.




A full wave rectifier is operating at 50Hz, 220V the fundamental frequency of ripple will be