Physics MCQs for NEET — Practice Questions with Answers

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In an n-type semiconductor, where is the donor energy level ($E_D$) typically located relative to the conduction band ($E_C$)?

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Explanation

The context mentions: 'In the energy band diagram of n-type Si semiconductor, the donor energy level $E_D$ is slightly below the bottom $E_C$ of the conduction band and electrons from this level move into the conduction band with very small supply of energy.'

Which of the following statements about the energy band gap ($E_g$) for different materials is INCORRECT?

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Explanation

The text states: 'For C (diamond), Si and Ge, the energy gaps are 5.4 eV, 1.1 eV and 0.7 eV, respectively. Sn also is a group IV element but it is a metal because the energy gap in its case is 0 eV.' Therefore, $E_g > 3 \text{ eV}$ for Sn is incorrect.

What is the primary characteristic of the valence band?

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Explanation

The text defines: 'The energy band which includes the energy levels of the valence electrons is called the valence band.'

How do extrinsic semiconductors differ from intrinsic semiconductors in terms of minority carrier concentration at room temperature?

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Explanation

The context states: 'In extrinsic semiconductors, because of the abundance of majority current carriers, the minority carriers produced thermally have more chance of meeting majority carriers and thus getting destroyed. Hence, the dopant, by adding a large number of current carriers of one type, which become the majority carriers, indirectly helps to reduce the intrinsic concentration of minority carriers.'

What is the significance of the energy gap ($E_g$) in determining the electrical properties of a material?

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Explanation

The text clearly explains this for semiconductors: 'Here a finite but small band gap ($E_g < 3 \text{ eV}$) exists. Because of the small band gap, at room temperature some electrons from valence band can acquire enough energy to cross the energy gap and enter the conduction band.' This implies easier transition for smaller $E_g$, leading to conduction.

Which of the following characteristics defines the bottom of the conduction band ($E_C$) and the top of the valence band ($E_V$) in semiconductor energy band diagrams?

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Explanation

The 'POINTS TO PONDER' section states: 'The energy bands ($E_C$ or $E_V$) in the semiconductors are space delocalised which means that these are not located in any specific place inside the solid. The energies are the overall averages. When you see a picture in which $E_C$ or $E_V$ are drawn as straight lines, then they should be respectively taken simply as the bottom of conduction band energy levels and top of valence band energy levels.'

Which of the following statements about the normal to a spherical reflecting surface is correct?

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Explanation

According to the NCERT text, 'The normal in this case is to be taken as normal to the tangent to surface at the point of incidence. That is, the normal is along the radius, the line joining the centre of curvature of the mirror to the point of incidence.'

When a parallel beam of light, constituted by paraxial rays, is incident on a concave mirror, the reflected rays:

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Explanation

The NCERT text states, 'The reflected rays converge at a point F on the principal axis of a concave mirror [Fig. 9.3(a)].' This point F is defined as the principal focus for a concave mirror.

For a spherical mirror, the relationship between its focal length (f) and radius of curvature (R) for paraxial rays is given by:

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Explanation

The NCERT text explicitly derives and states this relationship: 'We now show that $f = R/2$, where R is the radius of curvature of the mirror.' This derivation is based on the small angle approximation for paraxial rays.

According to the Cartesian Sign Convention for spherical mirrors, if an object is placed to the left of the mirror, the object distance (u) is typically considered:

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Explanation

The Cartesian Sign Convention usually dictates that distances measured against the direction of incident light (which typically comes from the left) are negative. While the provided excerpt specifically mentions 'principal axis (x-axis) of the mirror/lens are taken as positive', the standard convention (implied by Fig 9.2's left-to-right incident light and positive x-axis to the right) is that object distances for real objects placed to the left are negative, as per general physics conventions for optical instruments. The textbook also mentions 'Distances measured in the same direction as the incident light are positive; those measured in the opposite direction are negative.' If incident light is from left to right, and the pole is the origin, then an object to the left would have a negative distance.

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