Which statement correctly describes the nature of holes in the valence band of a p-type semiconductor due to impurity doping?
The text states, 'With very small supply of energy an electron from the valence band can jump to the level $E_A$ and ionise the acceptor negatively.' When an electron leaves the valence band to fill an acceptor level, it leaves behind a hole in the valence band. So, the holes in the valence band are due to acceptance of electrons by acceptor impurities.