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A potential barrier of 0.6V exists across a P-N junction. If the depletion region is $1 \mu$ m wide, what is the intensity of electric field in the region ?
$ E = { v \over d } = { 0.6 \over 10^{-6}} $
when a PN junction diode is forward biased, then the depletion region_______ is
and barrier height is ____________
When a PN junction diode is forward biased, the external voltage reduces the potential barrier, causing the depletion region to shrink. Consequently, the barrier height is also reduced, allowing charge carriers to flow across the junction more easily.
A common- emitter amplifier has a voltage gain of 100, an input impedence of $ 100 \Omega $ and an output impedence of $ 200 \Omega $ .The product of voltage gain and current gain is
A P-N photodiode is made of a material with a band gap of 2.0ev. The minimum frequency of the radiation that can be absorbed by the material is nearly (Take hc = 1240eVnm)
$ A_p = { Av^2 \over {R_L \over r_i } } $
A n-p-n transistor circuit has $ \alpha $ = 0.985 . If $ I_c $= 9 mA then the value of $I_B$ is
Given that $eta = 0.985$ and $I_c = 9 ext{ mA}$. Using the relation $I_c = eta I_B$, we get $I_B = rac{I_c}{eta} = rac{9 ext{ mA}}{0.985} rac{9 ext{ mA}}{1 - 0.985} = 0.135 ext{ mA}$. Therefore, the correct option is o4.
For a transistor amplifier, the voltage gain
$ \alpha = { I_c \over I_E } $ $ I_E = I_B + I_C $
The manifestation of band structure in solids is due to :
The band structure in solids is a result of the Pauli exclusion principle, which states that no two electrons can occupy the same quantum state simultaneously. This principle leads to the formation of energy bands in solids.
Copper and silicon material is cooled down from 600K to 400K then, resistivity of cooper and silicon
Semi-conductor has phospholous as impurity then it will have
When phosphorus, a pentavalent impurity, is added to a semiconductor (typically silicon), it donates extra electrons. This type of semiconductor is called an n-type semiconductor. In an n-type semiconductor, the number of electrons ( _e ext{) is much greater than the number of holes ( _h ext{). Therefore, the correct answer is } n_e ext{) is much greater than the number of holes ( _h ext{). Therefore, the correct answer is } n_e ext{) is much greater than the number of holes ( _h ext{). Therefore, the correct answer is } n_e ext{) is much greater than the number of holes ( _h ext{). Therefore, the correct answer is } n_e > n_h.
Zener diode is used as
A Zener diode is specifically designed to allow current to flow in the reverse direction when a particular, specified voltage is reached. This property makes it very useful as a D.C. voltage regulator. It maintains a constant output voltage despite changes in the load current or input voltage.
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The bank mixes NEET previous year questions (PYQs) with practice questions, each tagged with its exam appearances where applicable.