Comparing the energy gaps of C (diamond), Si, and Ge, which statement is correct?
The NCERT states, 'For C (diamond), Si and Ge, the energy gaps are 5.4 eV, 1.1 eV and 0.7 eV, respectively.' This shows Ge has the smallest, then Si, then C.
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Comparing the energy gaps of C (diamond), Si, and Ge, which statement is correct?
The NCERT states, 'For C (diamond), Si and Ge, the energy gaps are 5.4 eV, 1.1 eV and 0.7 eV, respectively.' This shows Ge has the smallest, then Si, then C.
What happens to electrons and holes when they gain external energy in a semiconductor?
The NCERT text mentions, 'Electrons rise up and holes fall down when they gain external energy.'
Given below are two statements:
Statement I: Photovoltaic devices can convert optical radiation into electricity.
Statement II: Zener diode is designed to operate under reverse bias in breakdown region.
In the light of the above statements, choose the most appropriate answer from the options given below:
Both statements describe standard properties of the respective semiconductor devices.
A full wave rectifier circuit consists of two p-n junction diodes, a centre-tapped transformer, capacitor and a load resistance. Which of these components remove the ac ripple from the rectified output?
A shunt capacitor (filter) smooths the pulsating dc by charging on rising and discharging slowly on falling cycles.
For the following logic circuit, the truth table is:
Two NOT gates feed a NAND: $Y = \overline{\bar A \cdot \bar B} = A + B$ (OR gate by De Morgan).
Consider the following statements A and B and identify the correct answer:
A. For a solar-cell, the I-V characteristics lies in the IV quadrant of the given graph.
B. In a reverse biased $pn$ junction diode, the current measured in ($\mu A$), is due to majority charge carriers.
A is correct; B is wrong — reverse-bias current is from minority carriers.
The output ($Y$) of the given logic gate is similar to the output of an/a:
Boolean simplification of the combinational circuit gives $Y = A \cdot B$, i.e. AND.
A logic circuit provides the output $Y$ as per the following truth table:
| A | B | Y |
|---|---|---|
| 0 | 0 | 1 |
| 0 | 1 | 0 |
| 1 | 0 | 1 |
| 1 | 1 | 0 |
The expression for the output $Y$ is:
$Y = 1$ exactly when $B = 0$, so $Y = \overline{B}$.
The output (Y) of the given logic implementation is similar to the output of an/a ________ gate.
Each NOR gate gives $(A+B)'$. Feeding both identical outputs to a NAND: $Y = \overline{(A+B)'\cdot(A+B)'} = \overline{(A+B)'} = A+B$, i.e. an OR gate.
A full wave rectifier circuit with diodes $(D_1)$ and $(D_2)$ is shown in the figure. If input supply voltage $V_{in} = 220\sin(100\pi t)$ volt, then at $t = 15$ msec:
At $t = 15$ ms, $100\pi t = 1.5\pi$, $\sin(1.5\pi) = -1$, so $V_{in}$ is in its negative half cycle. Then $D_2$ conducts (forward biased) and $D_1$ is reverse biased.
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