Physics MCQs for NEET — Practice Questions with Answers

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If a small amount of aluminium is added to the silicon crystal

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Explanation

If trivalent impurity added to the pure semiconductor, then a p-type semiconductor is formed. In a p-type semiconductor, the majority charge carriers are holes and the minority charge carriers are electrons.

When a p-n junction is forward biased:

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Explanation

In F.B., p-region is at higher potential and n-region is to be at the lower potential.

Which of the following is correct for n-type semiconductor?

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Explanation

In n-type semiconductors, majority charge carriers are the electrons and minority charge carriers are holes when the pentavalent impurity is mixed into the pure semiconductor.

In semiconductors, which of the following gives the law of mass action (where symbols have their usual meanings)-

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Explanation

2.  ni2 = nenh  

The conductivity of an n-type semiconductor whose density of conduction electrons is ne, Density of holes is nh, Mobility of conduction electrons is m and Mobility of holes is mh, will be

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Explanation

4Conductivity of a semiconductor is s = eneme + nhmh

A semiconductor is known to have an electron concentration of 8 x 1013 cm-3 and hole concentration of 5 x 1012 cm-3. The semiconductor is

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Explanation


Majority charge carriers are electrons and minority charge carrier are holes in the given specimen of semiconductor, so the semiconductor is n-type

In a n-type semiconductor, which of the following statement is true ?

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Explanation

(c) The n-type semi-conductor can be produced by doping an impurity atom of valence 5 i.e., pentavalent atoms. i.e., phosphorus.

 

If a small amount of antimony is added to germanium crystal

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Explanation

 

When a small amount of antimony is added to

germanium crystal, the crystal becomes n-type

semiconductor because antimoney is a 

pentavalent substrate. It excess free electrons.

In forward biasing of the p-n junction 

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Explanation

In forward biasing of p-n junction the positive terminal of the battery is connected to p-side and the depletion region becomes thin.

Pure Si at 500 K has equal number of electron (ne) and hole (nh) concentrations of 1.5×1016m-3. Doping by indium increases nh to 4.5×1022 m-3. The doped semiconductor is of 

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Explanation

 ni2=nenh       ne=(ni)2nh       ne=(1.5×1016)2(4.5×1022)       ne=5×109 m-3

 So, nhne semiconductor is p-type.

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