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If no external voltage is applied across P-N junction, there would be
(b) Across the junction, a barrier potential is developed whose direction is from region to region.
Barrier potential of a P-N junction diode does not depend on
(d) Barrier potential does not depend upon diode design but it depends upon temperature, doping density, and forward biasing.
Zener breakdown takes place if
(b) Zener breakdown can occur in heavily doped diodes. In lightly doped diodes the necessary voltage is higher, and avalanche multiplication is then the chief process involved.
Which one of the following statements is not correct
(c) Diode acts as open switch only when it is reverse biased
Which is the wrong statement in following sentences?
A device in which P and N-type semiconductors are used is more useful then a vacuum type because
(d) P and N type semiconductors are stable. That's why these semiconductors have low efficiency.
If a full wave rectifier circuit is operating from 50 Hz mains, the fundamental frequency in the ripple will be
(c) In full wave rectifier, the fundamental frequency in ripple is twice that of input frequency.
A diode having potential difference 0.5 V across its junction which does not depend on current, is connected in series with resistance of 20 across source. If 0.1 A passes through resistance then what is the voltage of the source
The given information: Potential drop across the diode = 0.5 V, Resistance = 20 Ω, Current through resistance = 0.1 A. Voltage drop across the resistance = IR = 0.1 A × 20 Ω = 2 V. Total voltage of the source = Voltage drop across diode + Voltage drop across resistance = 0.5 V + 2 V = 2.5 V.
The emitter-base junction of a transistor is …… biased while the collector-base junction is ……. biased
(d) The emitter base junction is forward biased while collector base junction is reversed biased.
In a PNP transistor the base is the N-region. Its width relative to the P-region is
(a) The base is always thin
A common emitter amplifier is designed with NPN transistor ( = 0.99). The input impedance is 1 K and load is 10 K. The voltage gain will be
(c) Voltage gain = Resistance gain
Resistance gain =
Voltage gain = .
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The bank mixes NEET previous year questions (PYQs) with practice questions, each tagged with its exam appearances where applicable.