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Which of the following statements is not true
(c) In N-type semiconductor majority charge carriers are electrons.
The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon P-N junctions are
(b) In forward biasing the diffusion current increases and drift current remains constant so net current is due to the diffusion.
In reverse biasing diffusion becomes more difficult so net current (very small) is due to the drift.
The reason of current flow in P-N junction in forward bias is
(c) In forward biasing of PN-junction diode, current mainly flows due to the diffusion of majority charge carriers
The resistance of a reverse biased P-N junction diode is about
(d) The resistance of a reverse biased P-N juction is about 106 ohm
Avalanche breakdown is due to
(a) At high reverse voltage, the minority charge carriers, acquires very high velocities. These by collision break down the covalent bonds, generating more carriers. This mechanism is called Avalanche breakdown.
Zener breakdown in a semi-conductor diode occurs when
(b) When reverse bias is increased, the electric field at the junction also increases. At some stage the electric field breaks the covalent bond, thus the large number of charge carriers are generated. This is called Zener breakdown.
When forward bias is applied to a P-N junction, then what happens to the potential barrier , and the width of charge depleted region x
(d) In forward biasing both and x decreases.
Function of rectifier is
The primary function of a rectifier is to convert alternating current (AC) into direct current (DC). This is achieved by allowing the flow of current in one direction while blocking it in the opposite direction, effectively removing the negative half-cycles of the AC waveform.
When the P end of P-N junction is connected to the negative terminal of the battery and the N end to the positive terminal of the battery, then the P-N junction behaves like
(b) In this condition junction is reverse biased.
A potential barrier of 0.50 V exists across a P-N junction. If the depletion region is m wide, the intensity of the electric field in this region is
(a)
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