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In a transistor in CE configuration, the ratio of power gain to voltage gain is
(d) For CE configuration voltage gain
Power gain =
In a crystal, the atoms are located at the position of
(b) Atoms are leaked at minimum potential energy to be in stable equilibrium.
The distance between the body centred atom and a corner atom in sodium (a = 4.225 Å) is
In good conductors of electricity, the type of bonding that exists is
(d) Metallic bonding exists in good conductors.
Bonding in a germanium crystal (semi- conductor) is
(d) Covalent bonding exists in semi-conductor.
The ionic bond is absent in
(d) In H2O covalent bonding is present.
A P-type semiconductor can be obtained by adding
(b) Ga has a valancy of 3.
The valence of an impurity added to germanium crystal in order to convert it into a P-type semi conductor is
In a semiconductor, the concentration of electrons is and that of the holes is . The semiconductor is
(b) Since ; the semiconductor is N-type.
The valency of the impurity atom that is to be added to germanium crystal so as to make it a N-type semiconductor, is
To make germanium a N-type semiconductor, we need to introduce a pentavalent impurity atom, such as antimony (Sb), arsenic (As), or phosphorus (P). These impurity atoms have five valence electrons, one more than germanium's four. This extra electron is weakly bound and can move freely, contributing to electrical conductivity.
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The bank mixes NEET previous year questions (PYQs) with practice questions, each tagged with its exam appearances where applicable.