The energy band gap of Si is
(b) The energy band gap for Si=1.1 eV
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The energy band gap of Si is
(b) The energy band gap for Si=1.1 eV
The forbidden energy band gap in conductors, semiconductors and insulators are and respectively. The relation among them is
(b) In insulators, the forbidden energy gap is very large, in case of semiconductor it is moderate and in conductors the energy gap is zero.
When Ge crystals are doped with phosphorus atom, then it becomes
(c) Phosphorus is pentavalent.
Let and be the number of holes and conduction electrons respectively in a semiconductor. Then
(c) In intrinsic semiconductors, the creation or liberation of one free electron by the thermal energy has created one hole. Thus in intrinsic semiconductors =
Wires P and Q have the same resistance at ordinary (room) temperature. When heated, resistance of P increases and that of Q decreases. We conclude that
(d) Conductor has positive temperature coefficient of resistance but semiconductor has negative temperature coefficient of resistance.
In extrinsic P and N-type, semiconductor materials, the ratio of the impurity atoms to the pure semiconductor atoms is about
(d) In extrinsic semiconductors, impurity atoms are mixed per single atom of pure semiconductor.
The forbidden gap in the energy bands of germanium at room temperature is about
(c)
In P-type semiconductor the majority and minority charge carriers are respectively
(d) In P-type semiconductors, holes are majority charge carrier and electrons are minority charge carriers
At zero Kelvin a piece of germanium
(c) At zero Kelvin, there is no thermal agitation and therefore no electrons from valence band are able to shift to conduction band.
A semiconductor is cooled from to . Its resistance
(b) Resistance of semiconductor ∝
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