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In intrinsic semiconductor at room temperature, number of electrons and holes are
(a) At room temperature the number of electrons and holes are equal in the intrinsic semiconductor.
In a semiconductor the separation between conduction band and valence band is of the order of
(c) In semiconductors, Forbidden energy gap is of the order of 1 eV.
The intrinsic semiconductor becomes an insulator at
(d) At 0K temperature semiconductor behaves as an insulator, because at very low temperature electrons cannot jump from the valence band to conduction band.
In a good conductor the energy gap between the conduction band and the valence band is
(d) The conduction and valence bands in the conductors merge into each other.
The impurity atom added to germanium to make it N-type semiconductor is
(a) For N-type semiconductor, the impurity should be pentavalent.
When N-type of semiconductor is heated
(d) When a free electron is produced, simultaneously a hole is also produced.
To obtain a P-type germanium semiconductor, it must be doped with
(c) For P-type semiconductor the doping impurity should be trivalent.
The temperature coefficient of resistance of a semiconductor
(b) The temperature co-efficient of resistance of a semiconductor is always negative.
P-type semiconductor is formed when
A. As impurity is mixed in Si
B. Al impurity is mixed in Si
C. B impurity is mixed in Ge
D. P impurity is mixed in Ge
(c) The resistance of semiconductor decreases with the increase in temperature.
In case of a semiconductor, which of the following statement is wrong
(d) At absolute zero temperature, it behaves like a insulator.
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