Semiconductor Electronics: Materials, Devices and Simple Circuits MCQs for NEET — Physics Questions with Answers

When a P-N junction diode is forward biased, the external voltage reduces the potential barrier, thereby reducing the depletion region width and the barrier height. This allows for an easier flow of charge carriers across the junction.

A P-N junction is forward biased when a potential difference is applied across it such that the P region is connected to the positive terminal of the power supply and the N region is connected to the negative terminal. This reduces the barrier and allows current to flow easily.

In a P-N junction, there is no appreciable current when a potential difference is applied across the junction making the P section negative and the N section positive. This is because the P-N junction is reverse biased in this condition, leading to a high resistance and very little current flow.

The resistance of a P-N junction diode in forward biasing is a few ohms. In forward bias, the diode conducts current easily and has a low resistance.

When a P-N junction diode is in forward biased condition, the flow of current is mainly due to the diffusion of electrons. In forward bias, electrons from the N region diffuse into the P region and recombine with holes, leading to current flow.

When a junction diode is reverse biased, the potential barrier increases. This is because the reverse bias widens the depletion region, making it harder for charge carriers to cross the junction.

In a reverse-biased P-N junction diode, electrons and holes move away from the junction depletion region. This movement increases the width of the depletion region and the height of the potential barrier, limiting the flow of current.

The electrical resistance of the depletion layer is large because it has very few charge carriers. The depletion region is essentially devoid of free electrons and holes, making it an insulative barrier.