The electrical resistance of depletion layer is large because
(a) Depletion layer consist of mainly stationary ions.
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The electrical resistance of depletion layer is large because
(a) Depletion layer consist of mainly stationary ions.
The PN junction diode is used as
A PN junction diode is commonly used as a rectifier, which converts alternating current (AC) into direct current (DC). When forward-biased, the diode allows current flow in one direction, effectively rectifying the AC signal.
In the depletion region of an unbiased P-N junction diode there are
The depletion region or depletion layer is a region in a P-N junction diode where no mobile charge carriers are present. The depletion layer acts like a barrier that opposes the flow of electrons from the n-side and holes from the p-side.
On increasing the reverse bias to a large value in a PN-junction diode, current
(c) After a large reverse voltage is PN-junction diode, a huge current flows in the reverse direction suddenly. This is called Breakdown of PN-junction diode.
A semiconductor device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops almost to zero. The device may be
(c) When polarity of the battery is reversed, the P-N junction becomes reverse biased so no current flows.
The approximate ratio of resistances in the forward and reverse bias of the PN-junction diode is
(d) Resistance in forward biasing and resistance in reverse biasing
In a junction diode, the holes are due to
(d) The holes are created due to missing electrons.
In forward bias, the width of potential barrier in a P-N junction diode
(b) In forward biasing width of depletion layer decreases.
The cause of the potential barrier in a P-N diode is
During the formation of a junction diode, holes from p- region diffuse into n-region, and electrons from n-region diffuse into p-region. In both cases, when an electron meets a hole, they cancel the effect at each other and as a result, a thin layer at the junction becomes free from any of charges carriers. This is called the depletion layer. There is a potential gradient in the depletion layer, negative on the p-side, and positive on the n-side. The potential difference thus developed across the junction is called the potential barrier.
In a PN-junction diode not connected to any circuit
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