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In a good conductor the energy gap between the conduction band and the valence band is
(d) The conduction and valence bands in the conductors merge into each other.
The impurity atom added to germanium to make it N-type semiconductor is
(a) For N-type semiconductor, the impurity should be pentavalent.
When N-type of semiconductor is heated
(d) When a free electron is produced, simultaneously a hole is also produced.
To obtain a P-type germanium semiconductor, it must be doped with
(c) For P-type semiconductor the doping impurity should be trivalent.
The temperature coefficient of resistance of a semiconductor
(b) The temperature co-efficient of resistance of a semiconductor is always negative.
P-type semiconductor is formed when
A. As impurity is mixed in Si
B. Al impurity is mixed in Si
C. B impurity is mixed in Ge
D. P impurity is mixed in Ge
(c) The resistance of semiconductor decreases with the increase in temperature.
In case of a semiconductor, which of the following statement is wrong
(d) At absolute zero temperature, it behaves like a insulator.
Energy bands in solids are a consequence of
(b) Formation of energy bands in solids are due to Pauli's exclusion principle.
In a P-type semiconductor
(a) In P-type semiconductors, holes are majority charge carriers.
In a P-type semiconductor, germanium is doped with
(d) All are trivalent in nature.
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The bank mixes NEET previous year questions (PYQs) with practice questions, each tagged with its exam appearances where applicable.