Physics MCQs for NEET — Practice Questions with Answers

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GaAs is 

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Explanation

(b) It is an alloy of gallium and arsenic.

If ne and nh are the number of electrons and holes in a semiconductor heavily doped with phosphorus, then

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Explanation

(a) Phosphorus is a pentavalent impurity so ne>>nh .

To obtain electrons as majority charge carriers in a semiconductor, the impurity mixed is 

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Explanation

(d) Pentavalent impurity has extra electrons to donate.

For germanium crystal, the forbidden energy gap in joules is

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Explanation

(a) For Ge, Eg=0.7 eV=0.7×1.6×10-19 J = 1.12×10-19 J

Which is the correct relation for the forbidden energy gap in the conductor, semiconductor, and insulator

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Explanation

(b) for metals, Eg0

for semiconductors, 0<Eg<3 eV

for insulators, Eg>3 eV

At room temperature, a P-type semiconductor has

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Explanation

(a) In P-type semi conductor, holes are majority charge carriers.

The energy band gap is maximum in

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Explanation

(c) The energy band gap is maximum in insulators

for metals, Eg0

for semiconductors, 0<Eg<3 eV

for insulators, Eg>3 eV

The process of adding impurities to the pure semiconductor is called 

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Explanation

(c) It is called doping.

To a germanium sample, traces of gallium are added as an impurity. The resultant sample would behave like

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Explanation

(b) Gallium is trivalent impurity.

Donor type impurity is found in 

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Explanation

(b) One atom of pentavalent impurity, donates one electron.

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