GaAs is
(b) It is an alloy of gallium and arsenic.
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GaAs is
(b) It is an alloy of gallium and arsenic.
If and are the number of electrons and holes in a semiconductor heavily doped with phosphorus, then
(a) Phosphorus is a pentavalent impurity so >> .
To obtain electrons as majority charge carriers in a semiconductor, the impurity mixed is
(d) Pentavalent impurity has extra electrons to donate.
For germanium crystal, the forbidden energy gap in joules is
(a) For Ge,
Which is the correct relation for the forbidden energy gap in the conductor, semiconductor, and insulator
(b) for metals,
for semiconductors, 0<Eg<3 eV
for insulators, Eg>3 eV
At room temperature, a P-type semiconductor has
(a) In P-type semi conductor, holes are majority charge carriers.
The energy band gap is maximum in
(c) The energy band gap is maximum in insulators
for metals,
for semiconductors, 0<Eg<3 eV
for insulators, Eg>3 eV
The process of adding impurities to the pure semiconductor is called
(c) It is called doping.
To a germanium sample, traces of gallium are added as an impurity. The resultant sample would behave like
(b) Gallium is trivalent impurity.
Donor type impurity is found in
(b) One atom of pentavalent impurity, donates one electron.
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The bank mixes NEET previous year questions (PYQs) with practice questions, each tagged with its exam appearances where applicable.