P-type semiconductor is formed when
A. As impurity is mixed in Si
B. Al impurity is mixed in Si
C. B impurity is mixed in Ge
D. P impurity is mixed in Ge
(c) The resistance of semiconductor decreases with the increase in temperature.
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P-type semiconductor is formed when
A. As impurity is mixed in Si
B. Al impurity is mixed in Si
C. B impurity is mixed in Ge
D. P impurity is mixed in Ge
(c) The resistance of semiconductor decreases with the increase in temperature.
In case of a semiconductor, which of the following statement is wrong
(d) At absolute zero temperature, it behaves like a insulator.
Energy bands in solids are a consequence of
(b) Formation of energy bands in solids are due to Pauli's exclusion principle.
In a P-type semiconductor
(a) In P-type semiconductors, holes are majority charge carriers.
In a P-type semiconductor, germanium is doped with
(d) All are trivalent in nature.
GaAs is
(b) It is an alloy of gallium and arsenic.
If and are the number of electrons and holes in a semiconductor heavily doped with phosphorus, then
(a) Phosphorus is a pentavalent impurity so >> .
To obtain electrons as majority charge carriers in a semiconductor, the impurity mixed is
(d) Pentavalent impurity has extra electrons to donate.
For germanium crystal, the forbidden energy gap in joules is
(a) For Ge,
Which is the correct relation for the forbidden energy gap in the conductor, semiconductor, and insulator
(b) for metals,
for semiconductors, 0<Eg<3 eV
for insulators, Eg>3 eV
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