At room temperature, a P-type semiconductor has
(a) In P-type semi conductor, holes are majority charge carriers.
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At room temperature, a P-type semiconductor has
(a) In P-type semi conductor, holes are majority charge carriers.
The energy band gap is maximum in
(c) The energy band gap is maximum in insulators
for metals,
for semiconductors, 0<Eg<3 eV
for insulators, Eg>3 eV
The process of adding impurities to the pure semiconductor is called
(c) It is called doping.
To a germanium sample, traces of gallium are added as an impurity. The resultant sample would behave like
(b) Gallium is trivalent impurity.
Donor type impurity is found in
(b) One atom of pentavalent impurity, donates one electron.
The difference in the variation of resistance with temperature in a metal and a semiconductor arises essentially due to the difference in the
(c) In a metal, the no. of charge carriers remains same with increase in temperature and their kinetic energy increases.
In a semi-conductor the no. of charge carriers increases with increase in temperature.
The charge on a hole is equal to the charge of
(b) The charge on hole is positive.
A Ge specimen is doped with Al. The concentration of acceptor atoms is . Given that the intrinsic concentration of electron hole pairs is , the concentration of electrons in the specimen is
(a)
Which of the following has negative temperature coefficient of resistance
(d) Temperature co-efficient of semiconductor is negative.
In semiconductors at a room temperature
(a) Copper, Aluminum, Iron are conductors, while Ge is semiconductor.
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