Semiconductor Electronics: Materials, Devices and Simple Circuits MCQs for NEET — Physics Questions with Answers

Practice free Semiconductor Electronics: Materials, Devices and Simple Circuits (Physics) NEET multiple-choice questions online with instant answers and detailed explanations. No login required.

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Regarding a semiconductor which one of the following is wrong 

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Explanation

(a) At room temperature, few bonds breaks and electron hole pair generates inside the semiconductor.

Which of the following statements is true for an N-type semi-conductor 

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Explanation

(a) For N-type semiconductor, he donor level lies  below the bottom of the conduction band.

Choose the correct statement

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Explanation

(b) With rise in temperature, conductivity of semiconductor increases while resistance decreases.

Intrinsic semiconductor is electrically neutral. Extrinsic semiconductor having large number of current carriers would be 

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Explanation

(d) Extrinsic semiconductor (N-type or P-type) are neutral.

If ne and vd be the number of electrons and drift velocity in a semiconductor. When the temperature is increased

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Explanation

(a) Because vd=I(ne)eA

The energy gap of silicon is 1.14 eV. The maximum wavelength at which silicon will begin absorbing energy is

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Explanation

(a) λmax=hcE=6.6×10-34×3×1081.14×1.6×10-19=10888Å

The mobility of free electrons is greater than that of free holes because

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Explanation

(d) Electrons require low energy for mobility as they suffer low resistance during their motion as compared to holes.

In a semiconducting material, the mobilities of electrons and holes are μe and μh respectively. Which of the following is true?

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Explanation

(a) Because electrons needed less energy to move.

A silicon speciman is made into a P-type semi-conductor by dopping, on an average, one Indium atom per 5×107 silicon atoms. If the number density of atoms in the silicon specimen is 5×1028 atoms/m3 then the number of acceptor atoms in silicon per cubic centimetre will be

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Explanation

(c) Number density of atoms in silicon specimen = 5×1028 atom/m3 = 5×1022 atom/cm3. Since one atom of indium is doped in 5×107 Si atom. So number of indium atoms doped per cm3 of silicon.

n=5×10225×107=1×1015 atom/cm3

The probability of electrons to be found in the conduction band of an intrinsic semiconductor at a finite temperature

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Explanation

(a) The probability of electrons to be found in the conduction band of an intrinsic semiconductor

PE=11+eE-EFkT   ; where k = Boltzmann's constant
Hence, at a finite temperature, the probability decreases exponentially with increasing band gap.

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