Regarding a semiconductor which one of the following is wrong
(a) At room temperature, few bonds breaks and electron hole pair generates inside the semiconductor.
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Regarding a semiconductor which one of the following is wrong
(a) At room temperature, few bonds breaks and electron hole pair generates inside the semiconductor.
Which of the following statements is true for an N-type semi-conductor
(a) For N-type semiconductor, he donor level lies below the bottom of the conduction band.
Choose the correct statement
(b) With rise in temperature, conductivity of semiconductor increases while resistance decreases.
Intrinsic semiconductor is electrically neutral. Extrinsic semiconductor having large number of current carriers would be
(d) Extrinsic semiconductor (N-type or P-type) are neutral.
If and be the number of electrons and drift velocity in a semiconductor. When the temperature is increased
(a) Because
The energy gap of silicon is 1.14 eV. The maximum wavelength at which silicon will begin absorbing energy is
(a) Å
The mobility of free electrons is greater than that of free holes because
(d) Electrons require low energy for mobility as they suffer low resistance during their motion as compared to holes.
In a semiconducting material, the mobilities of electrons and holes are and respectively. Which of the following is true?
(a) Because electrons needed less energy to move.
A silicon speciman is made into a P-type semi-conductor by dopping, on an average, one Indium atom per silicon atoms. If the number density of atoms in the silicon specimen is then the number of acceptor atoms in silicon per cubic centimetre will be
(c) Number density of atoms in silicon specimen = = . Since one atom of indium is doped in Si atom. So number of indium atoms doped per of silicon.
The probability of electrons to be found in the conduction band of an intrinsic semiconductor at a finite temperature
(a) The probability of electrons to be found in the conduction band of an intrinsic semiconductor
; where k = Boltzmann's constant
Hence, at a finite temperature, the probability decreases exponentially with increasing band gap.
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