Semiconductor Electronics: Materials, Devices and Simple Circuits MCQs for NEET — Physics Questions with Answers

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The depletion layer in PN junction diode is caused by

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Explanation

The depletion layer in a PN junction diode is caused by the diffusion of charge carriers. When a PN junction is formed, electrons from the N-region diffuse into the P-region and recombine with holes, and holes from the P-region diffuse into the N-region and recombine with electrons. This diffusion results in the creation of a region devoid of free charge carriers, known as the depletion layer.

The active junction area in a solar cell is _______ as we want_________ power

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Explanation

In a solar cell, we aim to maximize the power output. A larger active junction area allows for the absorption of more light, which in turn generates more electron-hole pairs and increases the current produced by the solar cell. Hence, the active junction area in a solar cell is large to achieve more power.

The forbidden energy band gap in semi-conductor, conductor and insulator are $E_1, E_2 and E_3 $ respectively. The relation among then is :

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A light emitting diode has a voltage drop of 2V across it when 10mA current is passed. If this LED is to be operated with 6V battery the value of limiting resistor would be

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Explanation

To find the value of the limiting resistor ( $R$ ) for an LED, we use Ohm's law. Given the parameters: the voltage drop across the LED ( $V_{LED} = 2V$ ), the current through the LED ( $I = 10 mA$ ), and the supply voltage ( $V_{supply} = 6V$ ). The resistor value can be calculated as follows:

$$R = \frac{V_{supply} - V_{LED}}{I}$$

Substituting the values:

$$R = \frac{6V - 2V}{10 mA}$$

$$R = \frac{4V}{10 mA}$$

$$R = 400 \Omega$$

Thus, the value of the limiting resistor is $400 \Omega$ .

The number of holes and electrons in an intrinsic conductors are x and y respectively at room temperature. Which of the following options are true ?

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Explanation

In intrinsic semiconductors, the number of electrons (y) is equal to the number of holes (x). This is because intrinsic semiconductors are pure and have no impurities, so the generation of electron-hole pairs is balanced.

How will you increase the resistivity of Ge semi-conductor ?

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Explanation

Decreasing the temperature of a semiconductor increases its resistivity. This is because lower temperatures reduce the thermal energy available to generate electron-hole pairs, thereby reducing the number of charge carriers.

From the following semi-conductor devices,________ operates in forward bias only.

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Explanation

A Light Emitting Diode (LED) operates only in forward bias. In forward bias, the LED allows current to pass through and emits light. Varactor diodes, Zener diodes, and photodiodes either operate in reverse bias or can operate in both forward and reverse bias depending on their specific applications.

_______- device is the odd-one out.

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Explanation

Only solar- cell generates e.m.f and it does not need bias -voltage

The value of depletion capacitance _______ on decreasing the reverse bias on varactor diode

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In forward bias made, the P.N junction diode resistance will

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Explanation

In forward bias mode, the P-N junction diode allows current to flow easily, resulting in a lower resistance. Therefore, the resistance of a P-N junction diode in forward bias is 'less'.

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