The ratio of concentration of electrons and holes in a semi-conductor is 7 /5 , then what is the ratio of currents is 7/ 4 , then what is the ratio of their drift velocities ?
$ v_d = { I \over nAe } $ $ \therefore v_d \alpha { I \over n } $
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The ratio of concentration of electrons and holes in a semi-conductor is 7 /5 , then what is the ratio of currents is 7/ 4 , then what is the ratio of their drift velocities ?
$ v_d = { I \over nAe } $ $ \therefore v_d \alpha { I \over n } $
In a P-type silicon, which of the following statement is true ?
In a P-type silicon, holes are the majority charge carriers, and the dopants are trivalent atoms. This is because trivalent atoms create 'holes' by accepting electrons.
A zener diode used as voltage regulator is connected . (i) in forward bias (ii) in reverse bias (iii) in parallel with load (iv) in series with load
A Zener diode is used as a voltage regulator by operating it in reverse bias. In this configuration, the Zener diode is connected in parallel with the load to maintain a constant voltage across the load. This is because in reverse bias, the Zener diode maintains a constant voltage (Zener voltage) across it once the breakdown voltage is reached.
A potential barrier of 0.6V exists across a P-N junction. If the depletion region is $1 \mu$ m wide, what is the intensity of electric field in the region ?
$ E = { v \over d } = { 0.6 \over 10^{-6}} $
when a PN junction diode is forward biased, then the depletion region_______ is
and barrier height is ____________
When a PN junction diode is forward biased, the external voltage reduces the potential barrier, causing the depletion region to shrink. Consequently, the barrier height is also reduced, allowing charge carriers to flow across the junction more easily.
A P-N photodiode is made of a material with a band gap of 2.0ev. The minimum frequency of the radiation that can be absorbed by the material is nearly (Take hc = 1240eVnm)
$ A_p = { Av^2 \over {R_L \over r_i } } $
The manifestation of band structure in solids is due to :
The band structure in solids is a result of the Pauli exclusion principle, which states that no two electrons can occupy the same quantum state simultaneously. This principle leads to the formation of energy bands in solids.
Copper and silicon material is cooled down from 600K to 400K then, resistivity of cooper and silicon
Semi-conductor has phospholous as impurity then it will have
When phosphorus, a pentavalent impurity, is added to a semiconductor (typically silicon), it donates extra electrons. This type of semiconductor is called an n-type semiconductor. In an n-type semiconductor, the number of electrons ( _e ext{) is much greater than the number of holes ( _h ext{). Therefore, the correct answer is } n_e ext{) is much greater than the number of holes ( _h ext{). Therefore, the correct answer is } n_e ext{) is much greater than the number of holes ( _h ext{). Therefore, the correct answer is } n_e ext{) is much greater than the number of holes ( _h ext{). Therefore, the correct answer is } n_e > n_h.
Zener diode is used as
A Zener diode is specifically designed to allow current to flow in the reverse direction when a particular, specified voltage is reached. This property makes it very useful as a D.C. voltage regulator. It maintains a constant output voltage despite changes in the load current or input voltage.
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